Charge carrier recombination studies of Tm-doped CsPbBr₃ by temperature-dependent PL and TR-PL

Sunny Saurabh^1*, Tzu-Chi Huang^2,1, Yen-Ting Li³, Yi-Chen Li¹, Wei-Lon Wei¹, Yu-Hao Wu^4,1, Chien-Yu Lee¹, Bo-Yi Chen¹, Gung-Chian Yin¹, Mau-Tsu Tang¹, Yu-Cheng Chiu³, Bi-Hsuan Lin¹

¹National Synchrotron Radiation Research Center, Hsinchu, Taiwan
²Department of Chemical Engineering, National United University, Miaoli, Taiwan
³Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan
⁴Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

* Presenter:Sunny Saurabh, email:saurabh.s@nsrrc.org.tw

In this work, we investigated the photophysics of Tm-doped CsPbBr₃ by photoluminescence and time resolved photoluminescence across the temperature range of 20–300 K. Three emission peaks of Tm-doped CsPbBr₃ were identified as the Tm^{3+ 1}G₄ → ³H₆ transition, band gap emission, and near band edge (NBE) defect state. The role of energy transfer between Tm³⁺ ions and CsPbBr₃ perovskite is suggested to make the dominant peak vary between band gap emission and NBE defect states above 150 K. Additionally, elemental distribution and trivalent state of Tm ions in CsPbBr₃ were demonstrated using X-ray fluorescence mapping and X-ray absorption spectroscopy at the TPS 23A Nanoprobe beamline.

Keywords: perovskites, photoluminescence, time-resolved photoluminescence, X-ray absorption spectroscopy