High-Efficiency Aluminum Nitride Metalens in the Deep Ultraviolet

Yu Hung Lin^1*, Yu Chieh Peng¹, Yu Jie Wang¹, Kuan-Heng Chen¹, Bo Ray Lee¹, Kuniaki Konishi², Ray-Hua Horng¹, Ming Lun Tseng¹

¹The Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
²Institute for Photon Science and Technology, The University of Tokyo, Tokyo 113-0033, Japan

* Presenter:Yu Hung Lin, email:j90041811@gmail.com

Deep ultraviolet light (DUV) plays a critical role in nanofabrication, biomedical research, and novel spectroscopy. However, the strong absorption characteristics of materials make it challenging to develop innovative DUV devices. Here, we propose DUV dielectric metalenses consisting of aluminum nitride (AlN) nanopillars and demonstrate their applications. The reported metalenses are only 300 nm in thickness and capable of focusing the incident DUV light to a spot size approaching the diffraction limit. Our results suggest that the reported metalenses offer a promising path toward the novel DUV devices and systems.

Keywords: Metalens, Metasurface, Bioimaging, Laser processing