Band-Filling Effect on Anomalous Hall Conductivity and Thermoelectric Property in Weyl Semimetal Co₃Sn₂S₂
Yu Hao Chang1*, Ren Hao Jhang2, Shang-Fan Lee2, Jing-Yue Huang3, Cheng-Maw Cheng3,1, Huan-Li Meng4, Yung-Kang Kuo4, Yi Jia Tsai2, Min-Nan Ou2, Chia Nung Kuo5,6, Chin Shan Lue5,6, Hsin-Ju Chen1, Hung-Cheng Wu1, Hung-Duen Yang1,7
1Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
2Institute of Physics, Academia Sinica, Taipei, Taiwan
3National Synchrotron Radiation Research Center, Hsinchu City, Taiwan
4Department of Physics, National Dong Hwa University, Hualien, Taiwan
5Department of Physics, National Cheng Kung University, Tainan, Taiwan
6Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, Taiwan
7Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan
* Presenter:Yu Hao Chang, email:cassis88855@gmail.com
The anomalous Hall effect arises from both intrinsic and extrinsic mechanisms. Recent studies have shown that doping enhances the anomalous Hall conductivity (AHC) in Co₃Sn₂S₂, prompting an investigation into its band structure. In this work, we demonstrate that both Ni-substitution and Fe-substitution enhance the AHC, which we attribute to shifts in the Fermi energy and band-broadening effects, as confirmed by our angle-resolved photoemission spectroscopy measurements. Additionally, we report the temperature-dependence of the Seebeck coefficient and thermal conductivity. The temperature-dependent Seebeck coefficient curve fitting provides additional support for dopant-induced modifications of the band structure and Fermi energy, and the temperature-dependent thermal conductivity exhibits decreased values in Fe-doped and Ni-doped samples. These findings enhance our understanding of band-filling effects on AHC, potentially advancing topological spintronics.


Keywords: The anomalous Hall effect, Transport phenomena, Weyl semimetal, Band-filling effect