Quantum Transport in V-doped WSe2

Pin-Fu Hung^1*, Jui-Che Chung³, Jheng-Jie Lin², He-Yu Chen², Wen-Yu Wang², Yu-Ling Tsai⁴, Luke William Smith², Ming-Chi Chou⁴, Shu-Wei Wang¹

¹Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
²Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
³Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
⁴Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 804, Taiwan

* Presenter:Pin-Fu Hung, email:q16121062@gs.ncku.edu.tw

^Abstract
2D materials have been the focus of research in condensed matter physics in the past two decades due to their unique atomically thin lattice structures that lead to many unique properties. Recent studies show that doping 2D materials with transition metal dichalcogenides (TMDs) can change the electrical and magnetic properties of the materials. For example, doping vanadium (V) in tungsten diselenide (WSe2) could give rise to exciting properties that pure WSe2 does not possess, such as the induced ferromagnetic order at room temperature. While some studies regarding V-doped WSe2 were carried out, many properties of the V-doped WSe2 remain unexplored. In this work, we study the transport properties in V-doped WSe2 with different V doping levels. The dependences of the carrier transport behavior on temperatures, magnetic fields, carrier concentrations, and the number of layers are also examined.

Keywords: Tungsten diselenide, 2D materials, Transition metal dichalcogenides