Photoluminescence of defects in SiC wafer using Confocal Microscopy

Hsiu Ming Hsu^1*, Russel Cruz Sevilla¹, Irwan Saleh Kurniawan¹, Ruth Jeane Soebroto¹, Hsiu-Ying Huang¹, Chi-Tsu Yuan¹

¹Department of Physics, Chung Yuan Christian University, Taoyuan City, Taiwan

* Presenter:Hsiu Ming Hsu, email:jk0974010195@gmail.com

Silicon carbide (SiC) is widely recognized for its superior thermal, mechanical, and electrical properties, making it a crucial material in high-performance power devices. However, surface defects on SiC wafers can adversely affect the performance and reliability of electronic devices. Traditional methods of defect analysis often involve destructive testing, rendering wafers unusable after inspection. This study employs confocal microscopy to identify and characterize surface defects on SiC wafers, offering a non-destructive approach with high spatial resolution and optical sectioning capabilities. By systematically analyzing the distribution and morphology of defects such as pits and scratches, we aim to deepen the understanding of defect formation mechanisms in SiC. The insights gained from this study are essential for enhancing wafer quality and optimizing the performance of SiC-based electronic devices.

Keywords: Surface defect, non-destructive, confocal microscopy