Analysis of Edge Effect Causing by Nitrogen Annealing Concentration in pMOS FinFET

Cheng-Hsien Lin^1*, Chien-Hung Yeh², Ya-Huan Lee¹, Tsung-Han Yeh³, Ting-Chang Chang¹

¹Department of physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
²Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan
³Department of Electrical and Electronic Engineering, National Defense University, Taoyuan, Taiwan

* Presenter:Cheng-Hsien Lin, email:shen791124@gmail.com

This study observes the degradation trends in pMOS FinFETs with varying channel lengths under Negative Bias Stress (NBS) at different nitrogen annealing concentrations and provides an in-depth analysis of the underlying physical mechanisms. By incorporating Gate-Induced Drain Leakage (GIDL) and Hot Carrier Stress (HCS), the impact of varying nitrogen concentrations on device performance is thoroughly examined and validated across different channel lengths. These findings lead to the proposal of a novel physical mechanism model, explaining the edge effects caused by insufficient nitrogen passivation in long channels. Finally, through Negative Bias Temperature Instability (NBTI) tests, the quality of the oxide interface layers is compared, confirming the correlation between nitrogen annealing concentration and edge effects in long-channel devices. The results indicate that precise control of annealing gas concentration is essential for minimizing edge-induced degradation.

Keywords: pMOS FinFET, Edge Effect, NBS, NBTI, Nitrogen Annealing