Silicon field-effect transistors beyond the classical digital logic

Shun-Tsung Lo^1,2*

¹Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
²Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

* Presenter:Shun-Tsung Lo, email:stlo@nycu.edu.tw

Semiconductor digital logic using distinct on and off current states in a field-effect transistor (FET) becomes less reliable with scaling down the device size due to induced quantum phenomena with enhanced charge leakage. Although various approaches have been proposed to manipulate quantum states in quantum systems, there still exist fundamental coherent problems for quantum state operation. Nonetheless, quantum or quantum-inspired concepts have motivated new transistor architectures for not only quantum but also classical computation. Our group together with the collaborators conceive several different FET structures with an engineered semiconducting channel, gate dielectric, and gate metal and also apply them to study transport physics and circuit applications. In particular, in a nanostructure assembly, abundant physical states exist but they are challenging to be detected and employed for applications. In this talk, I will introduce our recent work on the detection and control of complex current networks in gate-all-around and planar-gated polysilicon FETs using quantum tunneling and ferroelectric switching. Moreover, we demonstrate an out-of-equilibrium way to tune an exotic metal-to-insulator transition in a ferroelectric FET.

Keywords: complex current networks, polysilicon field-effect transistor, quantum tunneling, ferroelectric switching