Minimizing the Schottky barrier between metal contacts and 2D transition metal dichalcogenides

Pei-Yu Chuang^1*, Tzu-Tai Huang², Shu-Hsuan Su², Yu-Chuan Lin³, Jung-Chun- Andrew Huang², Cheng-Maw Cheng^1,4,5

¹National Synchrotron Radiation Research Center, Hsinchu, Taiwan
²Department of Physics, National Cheng Kung University, Tainan, Taiwan
³Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
⁴Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan
⁵Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

* Presenter:Pei-Yu Chuang, email:chuang.py@nsrrc.org.tw

We have successfully fabricated single crystalline TIs on 2D TMDs. Initially, the single crystalline 2D-Ms, Subsequently, these 2D-Ms were provided to the epitaxial growth of 2D/3D TIs. To present the results of angle-resolved photoemission spectroscopy (ARPES) conducted on Sb₂Te₃ grown on 1L MoS₂. The ARPES studies were performed at beamline 39A of the Taiwan Photon Source of National Synchrotron Radiation Research Center (NSRRC), Following the MBE preparation of Sb₂Te₃ on MoS₂ to ex-situ bring to NSRRC. The vacuum exfoliation facilitates the study of ARPES on monolayer MoS₂ situated on different underlying templates, allowing us to explore the proximity effects at the interface between MoS₂ and Sb₂Te₃, and to examine how the choice of various underlying templates influences electronic properties. This systematic study sheds light on the intricate inter-actions and electronic behavior in the heterostructures formed by MoS₂ and Sb₂Te₃ on different templates.

Keywords: homogeneous and heterogeneous materials,, material growth and synthesis, spin-orbit interaction, low-dimensional semiconductors, thin films and heterostructures