Polarization-Sensitive Optical Emission and vdW Heterojunction in Quasi-1D Multilayered ZrS₃

Adzilah Shahna Rosyadi^1*, Ching-Hwa Ho¹

¹Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei City, Taiwan

* Presenter:Adzilah Shahna Rosyadi, email:D10922801@mail.ntust.edu.tw

In-plane anisotropy in two-dimensional (2D) materials is critical for developing advanced optoelectronic devices, such as polarization-sensitive emitters, detectors, and quantum materials. Expanding the range of anisotropic 2D materials remains a key research focus, with interest growing in materials like black phosphorus, GeS, ReS₂, and GaTe. In this work, we synthesize quasi-one-dimensional zirconium trisulfide (ZrS₃) nanoribbons with a unique b-axis orientation, unveiling multiple excitonic emissions despite ZrS₃’s known indirect bandgap. At low temperature (10K), the emissions resolve into three key features: an indirect resonant peak (D₁), an indirect defect-bound exciton (AInd), and a set of excitons indicating a quasi-direct bandgap nature. Moreover, we fabricate a van der Waals heterojunction solar cell using p-GaSe/n-ZrS₃. Under E||b-axis conditions, this heterojunction demonstrates a maximum efficiency of 0.412%, underscoring the potential of ZrS₃ nanoribbons in anisotropic photovoltaic applications and advancing the exploration of optoelectronic properties in anisotropic 2D materials.

Keywords: Excitonic Emissions, In-plane Anisotropy, Quasi-direct Bandgap, vdW Heterojunction, Zirconium Trisulfide