UV-Enhanced ALD-Deposited Indium Oxide for Future Electronics

Huynh-Uyen-Phuong Nguyen^1*, Po-Wen Chiu¹

¹College of Semiconductor Research, National Tsing-Hua University, Hsinchu, East District, Taiwan

* Presenter:Huynh-Uyen-Phuong Nguyen, email:phuongup@gmail.com

The continuous push for improved integrated circuit (IC) performance demands transistors with shorter channel lengths and reduced thickness. Oxide semiconductors, such as amorphous indium–gallium–zinc oxide (IGZO), are widely used in thin-film transistors (TFTs) for displays. However, their application in scaled, high-performance transistors is limited due to low charge carrier mobility (~10 cm²V⁻¹s⁻¹) and the need for relatively thick channel layers in mass production.

Our research addresses these challenges by introducing indium oxide transistors fabricated via atomic layer deposition (ALD), enhanced with ultraviolet (UV) manipulation. Through precise ALD control, we fabricate indium oxide transistors with varied channel thicknesses, aided by vacuum ultraviolet (VUV) and deep ultraviolet (DUV) sources. The resulting wafer-scale ALD InOx films exhibit an atomically smooth surface and a low thermal budget of 150°C.

Experimental and theoretical results show that high on-state performance in ALD InOx transist

Keywords: Atomic Layer Deposition, Indium Oxide, Oxide Semiconductor, Thin Film Transistors, UV Irradiation