Tailored CVD hole-doping WSe₂ towards superior p-FETs Performance

I-Ling Li^1*, Cheng-Yang Syu², Cheng-Chieh Hsieh³, I-Son Chen², Yong-Jyun Wang⁴, Chien-Wei Chen⁵, Ying-Hao Chu⁴, Chao-Hui Yeh^1,2,3

¹College of Semiconductor Research, National Tsing Hua University, Hsinchu, Taiwan
²Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan
³Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
⁴Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
⁵Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan

* Presenter:I-Ling Li, email:mdcook2708@gmail.com

Two-dimensional transition metal dichalcogenides (TMDCs) have attracted global interest due to their tunable bandgap, excellent electrical and optical properties, and unique heterostructures. In this study, we focus on WSe₂, targeting p-type semiconductors through vanadium (V) substitution doping. Using conventional low-pressure chemical vapor deposition (LPCVD), we compared V₂O₅, NH₄VO₃, and pre-doped VSe₂ as V precursors for WSe₂ growth. Our results show that pre-sputtered VSe₂ on sapphire yielded superior film growth and improved electrical properties. This study advances the understanding of p-doped WSe₂ growth mechanisms, contributing to future low-power electronic and optoelectronic applications.

Keywords: 2D Materials, Heterostructure, p-type WSe₂ thin film, CVD growth of multilayer TMDCs