Anomalous Hall effect in room temperature ferromagnetic Fe₃GaTe₂ with patterned micro-disks

Ravish Kumar Jain^1*, Li-Zai Tsai¹, Ngo Trong Hai¹, Hung-Yan Chang¹, Raman Sankar¹, Jun-Zhi Liang², Shang-Fan Lee¹

¹Institute of Physics, Academia Sinica, Taipei City, Taiwan
²Department of Physics, Fu Jen Catholic University, Taipei City, Taiwan

* Presenter:Ravish Kumar Jain, email:ravish@gate.sinica.edu.tw

Skyrmions, are known to be formed in non-centrosymmetric magnetic materials due to bulk Dzyaloshinskii-Moriya interaction (DMI), in magnetic multilayers due to symmetry breaking at the interface generating interfacial DMI and in centrosymmetric magnetic materials with strong uniaxial magnetic anisotropy [1]. van der Waals room temperature ferromagnetic Fe₃GaTe₂ is a promising material to host topologically stable skyrmions due to its uniaxial (perpendicular) magnetic anisotropy. Recently, it has been reported that skyrmion lattices can be generated in Fe₃GaTe₂ by an optimized magnetic field-cooled method and such skyrmion lattices can remain stable even above room temperature [2]. For geometrically confined micro- or nano-structures, such as disks, the skyrmion spin configurations may interact with the boundaries to change topological charge [3]. In both, uniform layer or confined geometrical structure cases, the topological Hall effect may indicate the existence of skyrmions [4]. In this work, single crystals of Fe₃GaTe₂ grown by vapor transport method were studied for their magnetic and transport properties. Perpendicular magnetic anisotropy of the Fe₃GaTe₂ was confirmed using SQUID magnetometer. Anomalous Hall effect measurements were performed using physical property measurement system (PPMS) on exfoliated Fe₃GaTe₂ flakes fabricated into desired device structure to study the influence of shape anisotropy effect on magnetic configuration. This study is intended for exploring the potential of Fe₃GaTe₂ for the novel field of skyrmion-based logic devices.

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Keywords: van der Waals material, Anomalous Hall effect, Fe3GaTe2, transport properties, spin configuration