Characterization and Modeling of Optical Absorption in Heavily Doped Silicon Substrates.

YI-PANG CHIU^1*, CONG-QI WANG¹, KUAN-LIN HUANG², YAO-JUNG CHANG², KUAN-WEI SU¹

¹Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
²NXP Semiconductors Taiwan Ltd, Package Innovatio, Kaohsiung, Taiwan

* Presenter:YI-PANG CHIU, email:chiu.yi-pang.sc11@nycu.edu.tw

This study investigates the optical absorption characteristics of heavily doped silicon substrates, focusing on developing a model to accurately estimate absorption under heavily doping conditions. High doping concentrations are critical in semiconductor applications but introduce complex optical absorption effects. We constructed a model that accurately predicts absorption trends by measuring absorption across a range of wavelengths and doping concentrations. This model aids in optimizing silicon substrate design for applications requiring controlled optical properties, offering a valuable model for semiconductor and optoelectronic research.

Keywords: Optical Absorption of Silicon, semiconductor, optics