Study of Photoluminescence and Vertically Stacked Heterojunction in a Quaternary 2D material

Anna Milatul Ummah^1*, Ching-Hwa¹

¹Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, Taiwan

* Presenter:Anna Milatul Ummah, email:D11022804@mail.ntust.edu.tw

Using micro-thermal-modulated-reflectance (μTR) observations between 10 and 300 K, the band-edge excitons of few-layer AgBiP2Se6 are described. One threshold-energy-related transition (direct gap, A1) levels was found in the A exciton series. The A1 feature also exhibit high emission in micro-photoluminescence spectra at 20K. A threshold energy of A1 ≅ 1.619 eV at 20 K, may be associated with the d-to-d transition in the Rydberg series. Furthermore, it has been noted that the stacked p-Ga0.5In0.5Se/n-AgBiP2Se6 heterojunction exhibits a diode behavior and significant photo-response. AgBiP2Se6 is a promising 2D material for optoelectronic devices due to the excellent optical and electrical properties.

Keywords: Band-edge transition, luminescence, anisotropic quaternary 2D material