Counting the generation of non-thermal hot carriers by surface plasmon using an AlGaN/GaN high-electron-mobility transistor
Yun-Chorng Chang1*
1Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan
* Presenter:Yun-Chorng Chang, email:jeffchang@gate.sinica.edu.tw
The surface of a gateless AlGaN/GaN high-electron-mobility transistor (HEMT) is very sensitive to the attachment of electric charges which can greatly affect its channel conductance. For near two decades, HEMT has been researched as a possible sensor for chemical and bio-spices. In this study, we demonstrate the ability of an AlGaN/GaN HEMT to counting the plasmonic generation of hot carriers. A theoretical model explaining the detecting mechanism will be introduced and verified by several experimental results. We will also discuss several possible applications of HEMT devices in the field of Plasmonics.
Keywords: plasmonics, transistor, hot-carrier